Chemoabrasive polishing of MCT wafersGOLDSTEIN, M; HOROWITZ, A; MAKOVSKY, J et al.Metallography. 1983, Vol 16, Num 3, pp 321-326, issn 0026-0800Article

Silicon nitride passivant for HgCdTe n⁺p diodesKAJIHARA, N; SUDO, G; MIYAMOTO, Y et al.Journal of the Electrochemical Society. 1988, Vol 135, Num 5, pp 1252-1255, issn 0013-4651Conference Paper

Bipolar transistor action in cadmium mercury tellurideASHLEY, T; CRIMES, G; ELLIOTT, C. T et al.Electronics Letters. 1986, Vol 22, Num 11, pp 611-613, issn 0013-5194Article

HgCdTe heterojunction contact photoconductorSMITH, D. L; ARCH, D. K; WOOD, R. A et al.Applied physics letters. 1984, Vol 45, Num 1, pp 83-85, issn 0003-6951Article

Thermally induced optical bistability in CdHgTeCRAIG, D; DYBALL, M. R; MILLER, A et al.Optics communications. 1985, Vol 54, Num 6, pp 383-387, issn 0030-4018Article

The influence of doping on ultimate performance of Cd_xHg_1-xTe photoresistorsJOZWIKOWSKI, K; PIOTROWSKI, J.Journal of Technical Physics. 1984, Vol 25, Num 3-4, pp 487-492, issn 0324-8313Article

On the optimum thickness of a photoconductive detector: a 0.1 eV HgCdTe detectorGOPAL, V; WARRIER, A. V. R.Infrared physics. 1984, Vol 24, Num 4, pp 387-390, issn 0020-0891Article

Buildup of ion implantation damage in Hg_1-xCd_xTe for various x valuesUZAN-SAGUY, C; COMEDI, D; RICHTER, V et al.Journal of vacuum science and technology. A. Vacuum, surfaces, and films. 1989, Vol 7, Num 4, pp 2575-2579, issn 0734-2101, 5 p.Article

High responsivity HgCdTe heterojunction photoconductorARCH, D. K; WOOD, R. A; SMITH, D. L et al.Journal of applied physics. 1985, Vol 58, Num 6, pp 2360-2370, issn 0021-8979Article

Low-power nonlinear Fabry-Perot reflection in CdHgTe at 10μmMILLER, A; PARRY, G; DALEY, R et al.IEEE journal of quantum electronics. 1984, Vol 20, Num 7, pp 710-715, issn 0018-9197Article

Dependence of junction formation on substrate in implanted HgCdTeBUBULAC, L. O.Applied physics letters. 1985, Vol 46, Num 10, pp 976-978, issn 0003-6951Article

Broadly tunable mode-locked HgCdTe lasersPUTNAM, R. S; SALOUR, M. M; HARMAN, T. C et al.Applied physics letters. 1983, Vol 43, Num 5, pp 408-409, issn 0003-6951Article

Performance of p⁺-n HgCdTe photodiodesROGALSKI, A; JOZWIKOWSKA, A; JOZWIKOWSKI, K et al.Infrared physics. 1992, Vol 33, Num 6, pp 463-473, issn 0020-0891Article

(Hg, Cd)Te photoresistors with optical resonance cavity for 10.6 um radiationNIEDZIELA, T.Journal of Technical Physics. 1990, Vol 31, Num 1, pp 69-82, issn 0324-8313Article

Photoemission studies of the interfacial reactions between ZnS and anodic oxide film of HgCdTeJIN, S; LAU, W. M.Applied physics letters. 1989, Vol 55, Num 3, pp 209-211, issn 0003-6951, 3 p.Article

Influence of dislocations on the performance of 3 to 5 μm Hg_1-xCd_xTe graded gap photoresistors = Influence des dislocations sur les performances des photorésistors de Hg_1-xCd_xTe, de 3 à 5 μm, à gap amélioréMAŁACHOWSKI, M. J; PIOTROWSKI, J; ROGALSKI, A et al.Physica status solidi. A. Applied research. 1989, Vol 113, Num 2, pp 467-476, issn 0031-8965, 10 p.Article

Supersymmetry in heterojunctions: band-inverting contact on the basis of Pb_1-xSn_xTe and Hg_1-xCd_xTePANKRATOV, O. A; PAKHOMOV, S. V; VOLKOV, B. A et al.Solid state communications. 1987, Vol 61, Num 2, pp 93-96, issn 0038-1098Article

Photoelectromagetic effect in Cd_xHg_1-xTe graded-gap structuresGENZOW, D; JOZWIKOWSKA, A; JOZWIKOWSKI, K et al.Infrared physics. 1984, Vol 24, Num 1, pp 21-24, issn 0020-0891Article

Caractérisation en bruit des photodiodes P.I.N. Hg_1-xCd_xTe à λ=1,3 μm = Noise characterization of P.I.N. Hg_1-xCd_xTe photodides at λ=1,3 μmORSAL, B; ALABDRA, R; MAILLE, C et al.Revue de physique appliquée. 1984, Vol 19, Num 2, pp 63-67, issn 0035-1687Article

Degenerate four-wave mixing due to intervalence band transition in p-type mercury cadmium tellurideYUEN, S. Y.Applied physics letters. 1983, Vol 43, Num 5, pp 479-481, issn 0003-6951Article

Studies of cadmium mercury telluride I.R. detectors and materials using electron and optical beam induced currentsBYRNE, C. F; KNOWLES, P.GEC journal of research. 1988, Vol 6, Num 3, pp 129-138, issn 0264-9187Article

Near-ambient-temperature bipolar transistor in Cadmium mercury tellurideASHLEY, T; ELLIOTT, C. T; WHITE, A. M et al.Electronics Letters. 1987, Vol 23, Num 24, pp 1280-1281, issn 0013-5194Article

Tunneling effect in Cd_xHg_1-xTe photodiodesPLACZEK-POPKO, E; PAWLIKOWSKI, J. M.I.E.E.E. transactions on electron devices. 1985, Vol 32, Num 4, pp 842-844, issn 0018-9383Article

Ultimate performance of Cd_xHg_1-x Te photoresistors as a function of dopingJOZWIKOWSKI, K; PIOTROWSKI, J.Infrared physics. 1985, Vol 25, Num 6, pp 723-727, issn 0020-0891Article

Chemical modifications of Hg_0.1Cd_0.9Te surfaces: analysis with Auger electron spectroscopyTENNE, R; BRENER, R; TRIBOULET, R et al.Journal of vacuum science and technology. A. Vacuum, surfaces, and films. 1989, Vol 7, Num 4, pp 2570-2574, issn 0734-2101, 5 p.Article